ITCH22210B2E
ITCH22210B2E is High Power RF LDMOS FET manufactured by Innogration.
- Part of the ITCH22210B2 comparator family.
- Part of the ITCH22210B2 comparator family.
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH22210B2 Preliminary Datasheet V1.0
2110MHz-2170MHz, 210W, 28V High Power RF LDMOS FETs
Description
The ITCH22210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH22210B2
- Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
Frequency
Gp
P-1dB
P-3dB
D@P-3
(MHz)
(dB)
(dBm)
(dBm)
(%)
2110...
