* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant Table
ITCH22210B2E Datasheet (936.51 KB)
ITCH22210B2E
Innogration
936.51 KB
High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd. Document Number: ITCH22210B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 210W, 28V High Power RF LDMOS FETs Descript.
📁 Related Datasheet
ITCH22210B2 High Power RF LDMOS FET (Innogration)
ITCH22120B2 High Power RF LDMOS FET (Innogration)
ITCH22120B2E High Power RF LDMOS FET (Innogration)
ITCH22160B4 High Power RF LDMOS FET (Innogration)
ITCH22160B4E High Power RF LDMOS FET (Innogration)
ITCH22161B2 High Power RF LDMOS FET (Innogration)
ITCH22161B2E High Power RF LDMOS FET (Innogration)
ITCH22180B2 High Power RF LDMOS FET (Innogration)
ITCH22180B2E High Power RF LDMOS FET (Innogration)
ITCH20120B2 High Power RF LDMOS FET (Innogration)
