Datasheet4U Logo Datasheet4U.com

VTSV02350 RF Power N-channel MOSFET

VTSV02350 Description

Innogration (Suzhou) Co., Ltd.350W, 50V RF Power N-channel MOSFETs .
The VTSV02350 is a 350-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 2.

VTSV02350 Features

* Gold metallization
* Common source configuration, push pull
* Excellent thermal stability, low HCI drift
* Low RDS(on)
* Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipat

VTSV02350 Applications

* at frequencies up to 200 MHz.

📥 Download Datasheet

Preview of VTSV02350 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VTSV02350
Manufacturer
Innogration
File Size
906.02 KB
Datasheet
VTSV02350-Innogration.pdf
Description
RF Power N-channel MOSFET

📁 Related Datasheet

  • VTS2082 - VTS Process Photodiodes (ETC)
  • VTS40100CT - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VTS80 - VTS Process Photodiodes (ETC)
  • VTS82 - VTS Process Photodiodes (ETC)
  • VTS85 - VTS Process Photodiodes (ETC)
  • VTSB125A3 - SURFACE MOUNT TVS Diodes (VIC)
  • VTSB50X3 - SURFACE MOUNT TVS Diodes (VIC)
  • VTSB52A3 - SURFACE MOUNT TVS Diodes (VIC)

📌 All Tags

Power N-channel MOSFET Innogration
Innogration VTSV02350-like datasheet