VTSV02350 - RF Power N-channel MOSFET

Name: VTSV02350
SKU: VTSV02350-1296598

Innogration

📥 Download Datasheet

VTSV02350 Datasheet Preview — Preview of VTSV02350 PDF

Datasheet Details

Part number	VTSV02350
Manufacturer	Innogration
File Size	906.02 KB
Description	RF Power N-channel MOSFET
Datasheet	VTSV02350-Innogration.pdf

VTSV02350 Product details

Description

The VTSV02350 is a 350-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 200 MHz. Typical Performance (In Demo Fixture): VDD = 50 Volts, IDQ = 500 mA, CW.

Features

Gold metallization.
Common source configuration, push pull.
Excellent thermal stability, low HCI drift.
Low RDS(on).
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol V(BR)DSS VDGR VGS ID PDISS Tstg TC TJ Drain 12 Gate Source 34 5 Figure 1. Pin Connection Value 130.

📁 VTSV02350 Similar Datasheet

VTS2082 - VTS Process Photodiodes (ETC)
VTS40100CT - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VTS80 - VTS Process Photodiodes (ETC)
VTS82 - VTS Process Photodiodes (ETC)
VTS85 - VTS Process Photodiodes (ETC)
VTSB125A3 - SURFACE MOUNT TVS Diodes (VIC)
VTSB50X3 - SURFACE MOUNT TVS Diodes (VIC)
VTSB52A3 - SURFACE MOUNT TVS Diodes (VIC)

Other Datasheets by Innogration

VTSV02175 - RF Power N-channel MOSFET
VTSU011K2 - RF Power N-channel MOSFET
VTSU01900 - RF Power N-channel MOSFET

Published: Aug 5, 2018 |