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VTSV02350 RF Power N-channel MOSFET

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Description

Innogration (Suzhou) Co., Ltd.350W, 50V RF Power N-channel MOSFETs .
The VTSV02350 is a 350-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 2.

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Datasheet Specifications

Part number
VTSV02350
Manufacturer
Innogration
File Size
906.02 KB
Datasheet
VTSV02350-Innogration.pdf
Description
RF Power N-channel MOSFET

Features

* Gold metallization
* Common source configuration, push pull
* Excellent thermal stability, low HCI drift
* Low RDS(on)
* Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipat

Applications

* at frequencies up to 200 MHz.

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