Datasheet4U Logo Datasheet4U.com

VTSV02350 Datasheet - Innogration

RF Power N-channel MOSFET

VTSV02350 Features

* Gold metallization

* Common source configuration, push pull

* Excellent thermal stability, low HCI drift

* Low RDS(on)

* Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipat

VTSV02350 General Description

The VTSV02350 is a 350-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 200 MHz. * Typical Performance (In Demo Fixture): VDD = 50 Volts, IDQ = 500 mA, CW. Frequency Gp (dB) POUT (W) D (%) 175 MHz 17 350 60 .

VTSV02350 Datasheet (906.02 KB)

Preview of VTSV02350 PDF

Datasheet Details

Part number:

VTSV02350

Manufacturer:

Innogration

File Size:

906.02 KB

Description:

Rf power n-channel mosfet.

📁 Related Datasheet

VTSV02175 RF Power N-channel MOSFET (Innogration)

VTS2082 VTS Process Photodiodes (ETC)

VTS40100CT Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VTS80 VTS Process Photodiodes (ETC)

VTS82 VTS Process Photodiodes (ETC)

VTS85 VTS Process Photodiodes (ETC)

VTSB125A3 SURFACE MOUNT TVS Diodes (VIC)

VTSB50X3 SURFACE MOUNT TVS Diodes (VIC)

VTSB52A3 SURFACE MOUNT TVS Diodes (VIC)

VTSB54A3 SURFACE MOUNT TVS Diodes (VIC)

TAGS

VTSV02350 Power N-channel MOSFET Innogration

Image Gallery

VTSV02350 Datasheet Preview Page 2 VTSV02350 Datasheet Preview Page 3

VTSV02350 Distributor