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VTSV02175 Datasheet - Innogration

RF Power N-channel MOSFET

VTSV02175 Features

* Gold metallization

* Common source configuration

* Excellent thermal stability, low HCI drift

* Low RDS(on)

* Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipation Storage

VTSV02175 General Description

The VTSV02175 is a 175-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 200 MHz. * Typical Performance (In Demo Fixture): VDD = 50 Volts, IDQ = 250 mA, CW. Frequency Gp (dB) POUT (W) D (%) 175 MHz 15.5 190 63.

VTSV02175 Datasheet (872.92 KB)

Preview of VTSV02175 PDF

Datasheet Details

Part number:

VTSV02175

Manufacturer:

Innogration

File Size:

872.92 KB

Description:

Rf power n-channel mosfet.

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TAGS

VTSV02175 Power N-channel MOSFET Innogration

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