VTSV02175 RF Power N-channel MOSFET

Innogration

Description

Innogration (Suzhou) Co., Ltd.175W, 50V RF Power N-channel MOSFETs .
The VTSV02175 is a 175-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 2.

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Datasheet Specifications

Part number: VTSV02175
Manufacturer: Innogration
File Size: 872.92 KB
Datasheet: VTSV02175-Innogration.pdf
Description: RF Power N-channel MOSFET

Features

* Gold metallization
* Common source configuration
* Excellent thermal stability, low HCI drift
* Low RDS(on)
* Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipation Storage

Applications

* at frequencies up to 200 MHz.

VTSV02175 Distributors

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