VTSU011K2 Datasheet - Innogration

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VTSU011K2 RF Power N-channel MOSFET

Innogration (Suzhou) Co., Ltd.1200W, 100V RF Power N-channel MOSFETs .
The VTSU011K2 is a 1200-watt, N-channel MOSFETs, designed for pulsed applications at frequencies up to 200 MHz.

VTSU011K2-Innogration.pdf

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Datasheet Details

Part number:

VTSU011K2

Manufacturer:

Innogration

File Size:

789.60 KB

Description:

RF Power N-channel MOSFET

Features

* Common source configuration, push pull
* Excellent thermal stability, low HCI drift
* Low RDS(on)
* Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Storage Temperature Range Case Operating Temperature O

Applications

* at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications.
* Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10% Frequency Gp (dB) POUT (W) D (%) 120 MHz 26 1200 60 Document Numbe

VTSU011K2 Distributors

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