VTSU011K2 Datasheet - Innogration

RF Power N-channel MOSFET

VTSU011K2 Features

* Common source configuration, push pull

* Excellent thermal stability, low HCI drift

* Low RDS(on)

* Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Storage Temperature Range Case Operating Temperature O

VTSU011K2 General Description

The VTSU011K2 is a 1200-watt, N-channel MOSFETs, designed for pulsed applications at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications. * Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycl.

VTSU011K2 Datasheet (789.60 KB)

VTSU011K2 Datasheet Preview — Preview of VTSU011K2 PDF

Datasheet Details

Part number:

VTSU011K2

Manufacturer:

Innogration

File Size:

789.60 KB

Description:

Rf power n-channel mosfet.

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VTSU011K2 Power N-channel MOSFET Innogration

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VTSU011K2 Features

VTSU011K2 General Description

Datasheet Details

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