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VTSU01900 Datasheet - Innogration

RF Power N-channel MOSFET

VTSU01900 Features

* Common source configuration, push pull

* Excellent thermal stability, low HCI drift

* Low RDS(on)

* Pb-free, RoHS-compliant Document Number: VTSU01900 Production Datasheet V1.0 VTSU01900 Drain 1 Gate 2 Source 3 Figure 1. Pin Connection Table 1. Maximum Ratings Rating Drain-So

VTSU01900 General Description

The VTSU01900 is a 900-watt, N-channel MOSFETs, designed for pulsed or CW applications at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications. * Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty.

VTSU01900 Datasheet (859.64 KB)

Preview of VTSU01900 PDF

Datasheet Details

Part number:

VTSU01900

Manufacturer:

Innogration

File Size:

859.64 KB

Description:

Rf power n-channel mosfet.

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TAGS

VTSU01900 Power N-channel MOSFET Innogration

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