VTSU01900 Datasheet - Innogration

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VTSU01900 RF Power N-channel MOSFET

Innogration (Suzhou) Co., Ltd.900W, 100V RF Power N-channel MOSFETs .
The VTSU01900 is a 900-watt, N-channel MOSFETs, designed for pulsed or CW applications at frequencies up to 200 MHz.

VTSU01900-Innogration.pdf

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Datasheet Details

Part number:

VTSU01900

Manufacturer:

Innogration

File Size:

859.64 KB

Description:

RF Power N-channel MOSFET

Features

* Common source configuration, push pull
* Excellent thermal stability, low HCI drift
* Low RDS(on)
* Pb-free, RoHS-compliant Document Number: VTSU01900 Production Datasheet V1.0 VTSU01900 Drain 1 Gate 2 Source 3 Figure 1. Pin Connection Table 1. Maximum Ratings Rating Drain-So

Applications

* at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications.
* Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10% Frequency Gp (dB) POUT (W) D (%) 120 MHz 20 900 65
* Typical Pe

VTSU01900 Distributors

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