IS41LV16100 Datasheet - Integrated Silicon Solution

IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wo.

IS41LV16100 Features

* TTL compatible inputs and outputs; tristate I/O

* Refresh Interval:

* Auto refresh Mode: 1,024 cycles /16 ms

* RAS-Only, CAS-before-RAS (CBR), and Hidden

* Self refresh Mode - 1,024 cycles / 128ms

* JEDEC standard pinout

* Single power supply

IS41LV16100_IntegratedSiliconSolution.pdf

IS41LV16100 Datasheet Preview — Preview of IS41LV16100 PDF

Datasheet Details

Part number:

IS41LV16100

Manufacturer:

Integrated Silicon Solution

File Size:

207.40 KB

Description:

1m x 16 (16-mbit) dynamic ram with edo page mode.

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IS41LV16100 IS41LV16100 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution

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