Datasheet4U Logo Datasheet4U.com

IS41LV16100

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41LV16100 Features

* TTL compatible inputs and outputs; tristate I/O

* Refresh Interval:

* Auto refresh Mode: 1,024 cycles /16 ms

* RAS-Only, CAS-before-RAS (CBR), and Hidden

* Self refresh Mode - 1,024 cycles / 128ms

* JEDEC standard pinout

* Single power supply

IS41LV16100 General Description

The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wo.

IS41LV16100 Datasheet (207.40 KB)

Preview of IS41LV16100 PDF

Datasheet Details

Part number:

IS41LV16100

Manufacturer:

Integrated Silicon Solution

File Size:

207.40 KB

Description:

1m x 16 (16-mbit) dynamic ram with edo page mode.

📁 Related Datasheet

IS41LV16100A 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE (Integrated Silicon Solution)

IS41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE (Integrated Silicon Solution)

IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE (Integrated Silicon Solution)

IS41LV16105 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE (Integrated Silicon Solution)

IS41LV16105B 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE (Integrated Silicon Solution)

IS41LV16256 256K x 16 (4-MBIT) DYNAMIC RAM (ISSI)

IS41LV16256A 256K x 16 (4-MBIT) DYNAMIC RAM (Integrated Silicon Solution)

IS41LV16256B 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE (Integrated Silicon Solution)

IS41LV16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE (Integrated Silicon Solution Inc)

IS41LV16257A 256K x 16 (4-MBIT) DYNAMIC RAM (Integrated Silicon Solution)

TAGS

IS41LV16100 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution

Image Gallery

IS41LV16100 Datasheet Preview Page 2 IS41LV16100 Datasheet Preview Page 3

IS41LV16100 Distributor