IS41LV16100B Datasheet - Integrated Silicon Solution

IS41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. These featu.

IS41LV16100B Features

* TTL compatible inputs and outputs; tristate I/O

* Refresh Interval:

* Auto refresh Mode: 1,024 cycles /16 ms

* RAS-Only, CAS-before-RAS (CBR), and Hidden

* JEDEC standard pinout

* Single power supply: 3.3V ± 10%

* Byte Write and Byte Read ope

IS41LV16100B_IntegratedSiliconSolution.pdf

IS41LV16100B Datasheet Preview — Preview of IS41LV16100B PDF

Datasheet Details

Part number:

IS41LV16100B

Manufacturer:

Integrated Silicon Solution

File Size:

180.45 KB

Description:

1m x 16 (16-mbit) dynamic ram with edo page mode.

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IS41LV16100B IS41LV16100B 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution

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