IS41LV16100B - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.
These devices offer an accelerated cycle access called EDO Page Mode.
EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
These featu
IS41LV16100B Features
* TTL compatible inputs and outputs; tristate I/O
* Refresh Interval:
* Auto refresh Mode: 1,024 cycles /16 ms
* RAS-Only, CAS-before-RAS (CBR), and Hidden
* JEDEC standard pinout
* Single power supply: 3.3V ± 10%
* Byte Write and Byte Read ope
