IS41LV16256B Datasheet - Integrated Silicon Solution

IS41LV16256B 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Write control, of u.

IS41LV16256B Features

* TTL compatible inputs and outputs

* Refresh Interval: 512 cycles/8 ms

* Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden

* JEDEC standard pinout

* Single power supply: 3.3V ± 10%

* Byte Write and Byte Read operation via two CAS

* Lea

IS41LV16256B_IntegratedSiliconSolution.pdf

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Datasheet Details

Part number:

IS41LV16256B

Manufacturer:

Integrated Silicon Solution

File Size:

182.62 KB

Description:

256k x 16 (4-mbit) dynamic ram with edo page mode.

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IS41LV16256B IS41LV16256B 256K 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution

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