IS41LV16400 Datasheet - Integrated Silicon Solution

IS41LV16400 4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Wri.

IS41LV16400 Features

* Extended Data-Out (EDO) Page Mode access cycle

* TTL compatible inputs and outputs; tristate I/O

* Refresh Interval: 4,096 cycles / 64 ms

* Auto refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden

* Low Standby power dissipation:

* 1.8mW(max) CM

IS41LV16400_IntegratedSiliconSolution.pdf

IS41LV16400 Datasheet Preview — Preview of IS41LV16400 PDF

Datasheet Details

Part number:

IS41LV16400

Manufacturer:

Integrated Silicon Solution

File Size:

178.07 KB

Description:

4mx16 (64-mbit) dynamic ram with edo page mode.

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IS41LV16400 IS41LV16400 4Mx16 64-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution

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