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IS41LV16400 4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41LV16400 Description

IS41LV16400 4M x 16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories.

IS41LV16400 Features

* Extended Data-Out (EDO) Page Mode access cycle
* TTL compatible inputs and outputs; tristate I/O
* Refresh Interval: 4,096 cycles / 64 ms
* Auto refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
* Low Standby power dissipation:
* 1.8mW(max) CM

IS41LV16400 Applications

* The IS41LV16400 is packaged in a 50-pin TSOP (Type II). JEDEC standard pinout. PIN CONFIGURATION 50-Pin TSOP (Type II) VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC VCC W RAS NC NC NC NC A0 A1 A2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45

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Datasheet Details

Part number
IS41LV16400
Manufacturer
Integrated Silicon Solution
File Size
178.07 KB
Datasheet
IS41LV16400_IntegratedSiliconSolution.pdf
Description
4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

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4Mx16 64-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution
Integrated Silicon Solution IS41LV16400-like datasheet