IS41LV16400 Datasheet (Integrated Silicon Solution) - 4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41LV16400, 4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

The Byte Wri

IS41LV16400 Features

* Extended Data-Out (EDO) Page Mode access cycle

* TTL compatible inputs and outputs; tristate I/O

* Refresh Interval: 4,096 cycles / 64 ms

* Auto refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden

* Low Standby power dissipation:

* 1.8mW(max) CM