IS45S81600E 128Mb SYNCHRONOUS DRAM

Integrated Silicon Solution

Description

IS45S81600E IS45S16800E 1162M8Mxb8S, Y8NMCxH1R6O NOUS DRAM DECEMBER 2011 .
A0-A11 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O Syst.

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Datasheet Specifications

Part number: IS45S81600E
Manufacturer: Integrated Silicon Solution
File Size: 811.29 KB
Datasheet: IS45S81600E-IntegratedSiliconSolution.pdf
Description: 128Mb SYNCHRONOUS DRAM

Features

* Clock frequency: 166, 143 MHz
* Fully synchronous; all signals referenced to a positive clock edge
* Internal bank for hiding row access/precharge
* Power supply IS45S81600E Vdd Vddq 3.3V 3.3V IS45S16800E 3.3V 3.3V
* LVTT

Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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📁 Related Datasheet

IS45S81600F IS45S83200G IS45S83200J IS45S83200L IS45S86400D IS45S86400F

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IS45S81600E 128Mb SYNCHRONOUS DRAM Integrated Silicon Solution

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