IS46R16800E, IS43R16800E Datasheet - Integrated Silicon Solution

IS46R16800E - 128Mb DDR SDRAM

x16 A0-A11 Row Address Input A0-A8 Column Address Input BA0, BA1 Bank Select Address DQ0 * DQ15 Data I/O CK, CK System Clock Input CKE Clock Enable CS Chip Select CAS Column Address Strobe Command RAS Row Address Strobe Command WE Write Enable 4 66 VSS 65 DQ15 64 VSSQ 6

IS46R16800E Features

* DEVICE OVERVIEW

* VDD and VDDQ: 2.5V ± 0.2V (-5,-6)

* VDD and VDDQ: 2.5V ± 0.1V (-4)

* SSTL_2 compatible I/O

* Double-data rate architecture; two data transfers per clock cycle

* Bidirectional, data strobe (DQS) is transmitted/ received with data, to be

IS43R16800E-IntegratedSiliconSolution.pdf