IS62WV20488ALL - 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

Integrated Silicon Solution

IS62WV20488ALL Datasheet Preview — Preview of IS62WV20488ALL PDF

Datasheet Details

Part number	IS62WV20488ALL
Manufacturer	Integrated Silicon Solution
File Size	516.88 KB
Description	2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
Datasheet	IS62WV20488ALL_IntegratedSiliconSolution.pdf

IS62WV20488ALL Product details

Description

The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM.The IS62WV20488ALL/BLL is fabricated using ISSI's highperformance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.® PRELIMINARY INFORMATION JULY 2006 When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH, the device assumes a standby mode at which the power

Features

High-speed access times: 25, 35 ns.
High-performance, low-power CMOS process.
Multiple center power and ground pins for greater noise immunity.
Fully static operation: no clock or refresh required.
TTL compatible inputs and outputs.
Single power supply.
VDD 1.65V to 2.2V (IS62WV20488ALL) speed = 35ns for Vcc = 1.65V to 2.2V.
VDD 2.4V to 3.6V (IS62WV20488BLL) speed = 25ns for Vcc = 2.4V to 3.6V.
Packages available:.

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Published: Feb 22, 2009 |