N0001H Datasheet - InterFET

N0001H - Process Geometry

The InterFET N0001H Geometry is targeted high impedance low leakage applications.

The low input capacitance makes it ideal for high frequency applications.

Geometry Top View 01 G S-D S-D G Test Pattern Standard Parts * 2N4117/A, 2N4118/A, 2N4119/A * PAD1, PAD2, PAD5, PAD10

N0001H Features

* Low Input Capacitance: 2.0pF Typical

* Low Gate Leakage: 0.5pA Typical

* High Breakdown Voltage: -60V Typical

* High Input Impedance

* Small Die: 365um X 365um X 203um

* Bond Pads: 90um X 90um

* Substrate Connected to Gate

* Au Back-S

Datasheet Details

N0001H

InterFET

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Process geometry.

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