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N0001H Process Geometry

N0001H Description

InterFET Product Folder Technical Support Order Now N0001H N0001H Process Geometry .
The InterFET N0001H Geometry is targeted high impedance low leakage applications.

N0001H Features

* Low Input Capacitance: 2.0pF Typical
* Low Gate Leakage: 0.5pA Typical
* High Breakdown Voltage: -60V Typical
* High Input Impedance
* Small Die: 365um X 365um X 203um
* Bond Pads: 90um X 90um
* Substrate Connected to Gate
* Au Back-S

N0001H Applications

* Small Signal Amplifier
* Ultrahigh Impedance Pre-Amplifier
* Pico-Amp Diodes (PAD)
* High Input Impedance Buffers

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Datasheet Details

Part number
N0001H
Manufacturer
InterFET
File Size
569.49 KB
Datasheet
N0001H-InterFET.pdf
Description
Process Geometry

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