N0014EU Datasheet - InterFET

N0014EU - Process Geometry

The InterFET N0014EU Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View S-D S-D NC D 14EU Note: Gate connected to backside metal Connection Configuration Diode Gate Source-Drain .

N0014EU Features

* Low Input Capacitance: 2.3pF Typical

* Low Gate Leakage: 1.5pA Typical

* High Breakdown Voltage: -30V Typical

* High Input Impedance

* Die Size: 482um X 482um X 203um

* Bond Pads: 90um Diameter

* Substrate Connected to Gate

* Au Back

N0014EU-InterFET.pdf