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N0014L Process Geometry

N0014L Description

InterFET Product Folder Technical Support Order Now N0014L N0014L Process Geometry .
The InterFET N0014L Geometry is targeted for low noise high gain amplifier applications.

N0014L Features

* Low Input Capacitance: 2.3pF Typical
* Low Gate Leakage: 2.0pA Typical
* High Breakdown Voltage: -30V Typical
* High Input Impedance
* Small Die: 365um X 365um X 203um
* Bond Pads: 90um X 90um and 66um Dia.
* Substrate Connected to Gate

N0014L Applications

* Small Signal Amplifiers
* Audio Amplifiers
* Low Noise High Gain Amplifier
* RF Amplifiers

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Datasheet Details

Part number
N0014L
Manufacturer
InterFET
File Size
877.32 KB
Datasheet
N0014L-InterFET.pdf
Description
Process Geometry

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