N0016H Datasheet - InterFET

N0016H - Process Geometry

The InterFET N0016H Geometry is targeted for general purpose amplifiers, current limiters, regulators, and VCR applications.

The low input capacitance makes it ideal for mid-frequency applications.

Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation

N0016H Features

* Low Input Capacitance: 3.5pF Typical

* Low Gate Leakage: 10pA Typical

* High Breakdown Voltage: -60V Typical

* High Input Impedance

* Small Die: 391um X 391um X 203um

* Bond Pads: 90um X 90um

* Substrate Connected to Gate

* Au Back Si

Datasheet Details

N0016H

InterFET

876.21 KB

Process geometry.

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