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N0026S Process Geometry

N0026S Description

InterFET Product Folder Technical Support Order Now N0026S N0026S Process Geometry .
The InterFET N0026S Geometry is targeted high impedance low leakage applications.

N0026S Features

* Low Input Capacitance: 4.3pF Typical
* Low Gate Leakage: 10pA Typical
* High Breakdown Voltage: -45V Typical
* High Input Impedance
* Small Die: 365um X 365um X 203um
* Bond Pads: 90um X 90um
* Substrate Connected to Gate
* Au Back-Si

N0026S Applications

* Small Signal Amplifier
* High Impedance Pre-Amplifier
* Voltage Controlled Resistors

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Datasheet Details

Part number
N0026S
Manufacturer
InterFET
File Size
873.24 KB
Datasheet
N0026S-InterFET.pdf
Description
Process Geometry

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