F1010N Datasheet - International Rectifier

F1010N Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

F1010N Features

* 4) 1.15 (.04 5) M IN 1 2 3 LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14. 09 ( .55 5) 13. 47 ( .53 0) 4.06 (.160) 3.55 (.140) 3X 3X 1 .40 ( .0 55) 1 .15 ( .0 45) 0.93 (.037) 0.69 (.027) M B A M 3X 0.55 (.022 ) 0.46 (.018 ) 0. 36 ( .014) 2. 54 (.100 ) 2X NO T

F1010N-InternationalRectifier.pdf