* 4) 1.15 (.04 5) M IN 1 2 3 LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14. 09 ( .55 5) 13. 47 ( .53 0) 4.06 (.160) 3.55 (.140) 3X 3X 1 .40 ( .0 55) 1 .15 ( .0 45) 0.93 (.037) 0.69 (.027) M B A M 3X 0.55 (.022 ) 0.46 (.018 ) 0. 36 ( .014) 2. 54 (.100 ) 2X NO T
F1010N
International Rectifier
237.32 KB
Power mosfet.
PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temper.
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