F1010N Datasheet - International Rectifier

F1010N, Power MOSFET

PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temper.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

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F1010N-InternationalRectifier.pdf

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Datasheet Details

Part number:

F1010N

Manufacturer:

International Rectifier

File Size:

237.32 KB

Description:

Power MOSFET

Features

* 4) 1.15 (.04 5) M IN 1 2 3 LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14. 09 ( .55 5) 13. 47 ( .53 0) 4.06 (.160) 3.55 (.140) 3X 3X 1 .40 ( .0 55) 1 .15 ( .0 45) 0.93 (.037) 0.69 (.027) M B A M 3X 0.55 (.022 ) 0.46 (.018 ) 0. 36 ( .014) 2. 54 (.100 ) 2X NO T

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings

F1010N Distributors

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F1010N Power MOSFET International Rectifier

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