F1015 Datasheet, Transistor, Polyfet RF Devices

F1015 Features

  • Transistor gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1015 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS

PDF File Details

Part number:

F1015

Manufacturer:

Polyfet RF Devices

File Size:

38.07kb

Download:

📄 Datasheet

Description:

Rf power vdmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and P

Datasheet Preview: F1015 📥 Download PDF (38.07kb)
Page 2 of F1015

F1015 Application

  • Applications Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" pr

TAGS

F1015
POWER
VDMOS
TRANSISTOR
Polyfet RF Devices

📁 Related Datasheet

F1010EL - Power MOSFET (Power MOSFET)
PD - 91720 IRF1010ES IRF1010EL l l l l .. l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF10.

F1010ES - Power MOSFET (Power MOSFET)
PD - 91720 IRF1010ES IRF1010EL l l l l .. l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF10.

F1010EZ - N-Channel 60V MOSFET (VBsemi)
F1010EZ-VB F1010EZ-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single F.

F1010EZS - N-Channel 60V MOSFET (VBsemi)
F1010EZS-VB F1010EZS-VB Datasheet N-Channel 60 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 4 m .

F1010N - Power MOSFET (International Rectifier)
PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temper.

F1012 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F1014 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F1016 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F1018 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F1019 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

Stock and price

WEE
25+25 Pos. Female DIL 26AWG Cabl
DigiKey
G125-FC15005F1-0150L
2 In Stock
Qty : 2 units
Unit Price : $88.62
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts