F1010ES, F1010E Datasheet - Power MOSFET

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F1010ES, F1010E Power MOSFET

PD - 91720 IRF1010ES IRF1010EL l l l l www.DataSheet4U.com l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF10.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

F1010E_PowerMOSFET.pdf

F1010ES Datasheet Preview — This datasheet PDF includes multiple part numbers: F1010ES, F1010E. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

F1010ES, F1010E

Manufacturer:

Power MOSFET

File Size:

161.55 KB

Description:

Power MOSFET

Note:

This datasheet PDF includes multiple part numbers: F1010ES, F1010E.
Please refer to the document for exact specifications by model.

Features

* rrent Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRF

Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection

F1010ES Distributors

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