F1010EZ
VBsemi
253.71kb
N-channel 60v mosfet.
TAGS
📁 Related Datasheet
F1010EL - Power MOSFET
(Power MOSFET)
PD - 91720
IRF1010ES IRF1010EL
l l l l .. l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF10.
F1010ES - Power MOSFET
(Power MOSFET)
PD - 91720
IRF1010ES IRF1010EL
l l l l .. l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF10.
F1010EZS - N-Channel 60V MOSFET
(VBsemi)
F1010EZS-VB
F1010EZS-VB Datasheet
N-Channel 60 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V ID Configuration
60
V
4
m
.
F1010N - Power MOSFET
(International Rectifier)
PD - 91278
IRF1010N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temper.
F1012 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F1014 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F1015 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F1016 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F1018 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F1019 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
