* Generation 4 IGBT technology
* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
* Very low conduction and switching losses
* HEXFRED™ antiparallel diodes with ultra- soft recovery
* Industry standard p
GA200TD120U Datasheet (299.66 KB)
GA200TD120U
International Rectifier
299.66 KB
Half-bridge igbt double int-a-pak.
PD - 5.061B
PRELIMINARY
GA200TD120U
Ultra-FastTM Speed IGBT
VCES = 1200V VCE(on) typ. = 2.3V
@VGE = 15V, IC = 200A
"HALF-BRIDGE" IGBT DOUBLE INT-A-P.
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