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IRF1010ZPbF Power MOSFET

IRF1010ZPbF Description

PD - 95361A IRF1010ZPbF IRF1010ZSPbF .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

IRF1010ZPbF Applications

* Absolute Maximum Ratings HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 7.5mΩ S ID = 75A TO-220AB D2Pak TO-262 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°

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