IRF1010ZPbF Datasheet, MOSFET, International Rectifier

IRF1010ZPbF Features

• Mosfet IRF1010ZLPbF l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description

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Part number:

IRF1010ZPbF

Manufacturer:

International Rectifier

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395.54kb

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📄 Datasheet

Description:

Power mosfet. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Addition

IRF1010ZPbF Application

• Applications Absolute Maximum Ratings HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 7.5mΩ S ID = 75A TO-220AB D2Pak TO-262 IRF1010ZPbF IRF1010

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IRF1010ZPbF

International Rectifier

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