IRF2807ZS Datasheet, Mosfet, International Rectifier

IRF2807ZS Features

• Mosfet O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax Description Spec

PDF File Details

Part number:

IRF2807ZS

Manufacturer:

International Rectifier

File Size:

266.57kb

Download:

📄 Datasheet

Description:

Automotive mosfet. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ext

IRF2807ZS Application

• Applications this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additiona

TAGS

IRF2807ZS

International Rectifier

📁 Related Datasheet

IRF2807Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching S.

IRF2807Z - AUTOMOTIVE MOSFET (International Rectifier)
PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O.

IRF2807ZL - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test.

IRF2807ZL - AUTOMOTIVE MOSFET (International Rectifier)
PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O.

IRF2807ZLPBF - AUTOMOTIVE MOSFET (International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.

IRF2807ZPBF - AUTOMOTIVE MOSFET (International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.

IRF2807ZS - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IRF2807ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1.

IRF2807ZSPBF - AUTOMOTIVE MOSFET (International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.

IRF2807 - Power MOSFET (International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generat.

IRF2807 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t.