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IRF3315 N-Channel Power MOSFET

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Description

PD -91623A APPROVED l l l l l IRF3315 D HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Swit.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number
IRF3315
Manufacturer
International Rectifier
File Size
124.98 KB
Datasheet
IRF3315_InternationalRectifier.pdf
Description
N-Channel Power MOSFET

Features

* .55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A T

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings P

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