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IRF3315L, IRF3315S Power MOSFET

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Description

PD - 9.1617A PRELIMINARY l l l l l l IRF3315S/L HEXFET® Power MOSFET D Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hol.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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This datasheet PDF includes multiple part numbers: IRF3315L, IRF3315S. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRF3315L, IRF3315S
Manufacturer
International Rectifier
File Size
197.26 KB
Datasheet
IRF3315S_InternationalRectifier.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF3315L, IRF3315S.
Please refer to the document for exact specifications by model.

Features

* D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81

Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection

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