IRF3305PBF Datasheet, MOSFET, International Rectifier

IRF3305PBF Features

  • Mosfet O IRF3305PbF HEXFET® Power MOSFET D O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Tec

PDF File Details

Part number:

IRF3305PBF

Manufacturer:

International Rectifier

File Size:

183.48kb

Download:

📄 Datasheet

Description:

Power mosfet. Specifically designed for use in linear automotive applications this HEXFET Power MOSFET utilizes a rugged planar process technology

Datasheet Preview: IRF3305PBF 📥 Download PDF (183.48kb)
Page 2 of IRF3305PBF Page 3 of IRF3305PBF

IRF3305PBF Application

  • Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Lead-Free

TAGS

IRF3305PBF
Power
MOSFET
International Rectifier

📁 Related Datasheet

IRF3305 - Power MOSFET (International Rectifier)
PD - 95879 AUTOMOTIVE MOSFET Features O IRF3305 HEXFET® Power MOSFET D O O O O Designed to support Linear Gate Drive Applications 175°C Operating.

IRF3305 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3305, IIRF3305 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m.

IRF330 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF330 DESCRIPTION ·Drain Current ID=5.5A@ TC=25℃ ·Drain Source Vol.

IRF330 - N-Channel Power MOSFET (Samsung semiconductor)
.

IRF330 - N-Channel Power MOSFET (Intersil Corporation)
IRF330 Data Sheet March 1999 File Number 1570.4 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field.

IRF330 - N-Channel Power MOSFET (International Rectifier)
PD - 90335F IRF330 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/54.

IRF330 - N-Channel Power MOSFET (Fairchild Semiconductor)
.

IRF331 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF331 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switch.

IRF331 - N-Channel Power MOSFET (Fairchild Semiconductor)
.

IRF331 - N-Channel Power MOSFET (Samsung semiconductor)
.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts