IRF3415 Datasheet - International Rectifier

IRF3415, Power MOSFET

PD - 91477D IRF3415 HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRF3415_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF3415

Manufacturer:

International Rectifier

File Size:

94.54 KB

Description:

Power MOSFET

Features

* P AL ME P :L ETH : IS TH IS A IS N F IR EXA N AIR 1 0F1 1 00 1 0 W ITA H AE SM SB EL MY BLY W ITH SS LO TO D CE OD 9B1M LOT C 9E B 1M A A INR TE RT NIO A TIO NAL IN TE NA N AL RTIFIE E C TIF R EC R IE R 10 1 0 IR F IR 1 0F 10 LO G O LOG 9 2 49 62 4 6 9B 9B1 M 1 M AE SM SB EL MY BLY ASS LOT CE O DE

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings

IRF3415 Distributors

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