IRF3415
International Rectifier
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Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p
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IRF341 - N-Channel MOSFET Transistor
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isc Product Specification
IRF341
DESCRIPTION ·Silicon Gate for Fast Switching Speed ·Rugged
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IRF3415 - N-Channel MOSFET
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·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤42mΩ ·Enhancement mode ·Fast Switching Speed.
IRF3415L - Power MOSFET
(International Rectifier)
PD - 91509C
IRF3415S/L
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l l l l l l
Advanced Process Technology Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175.
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IRF3415LPBF - HEXFET Power MOSFET
(International Rectifier)
• Lead-Free
PD - 95112
IRF3415S/LPbF
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IRF3415S/LPbF
2 .irf.
IRF3415S/LPbF
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IRF3415S/LPbF
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IRF3415PBF - HEXFET Power MOSFET
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PD - 94963
IRF3415PbF
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated .
IRF3415S - Power MOSFET
(International Rectifier)
PD - 91509C
IRF3415S/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175.