IRF343
Inchange Semiconductor
42.92kb
N-channel mosfet transistor. *VGS Rated at ±20V *Silicon Gate for Fast Switching Speeds *IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature *Rugged A
📁 Related Datasheet
IRF340 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF340
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switch.
IRF340 - N-Channel Power MOSFET
(Samsung semiconductor)
.
IRF340 - N-Channel Power MOSFET
(International Rectifier)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA)
Product Summary
Part Number
BVDSS
IRF340
400V
RDS(on)
ID
0.55
1.
IRF340 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF340 - N-Channel Power MOSFETs
(ART CHIP)
IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40
N-Channel Power MOSFETs 10A, 350V/400V
Description
These devices are n-channel, enhancement mode, power MO.
IRF341 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF341
DESCRIPTION ·Silicon Gate for Fast Switching Speed ·Rugged
.
IRF341 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF341 - N-Channel Power MOSFET
(Samsung semiconductor)
.
IRF341 - N-Channel Power MOSFETs
(ART CHIP)
IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40
N-Channel Power MOSFETs 10A, 350V/400V
Description
These devices are n-channel, enhancement mode, power MO.
IRF3415 - Power MOSFET
(International Rectifier)
PD - 91477D
IRF3415
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully.
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