Datasheet4U Logo Datasheet4U.com

IRF3575DPbF - 60A Exposed Top Integrated Power Block

Datasheet Summary

Description

  The IRF3575DPbF exposed-top integrated Power Block is a single-phase synchronous

Features

  •  .
  •  Peak efficiency up to 95% at 1.2V.
  •  Integrated pair of control and synchronous MOSFETs in a single PQFN package.
  •  Proprietary package minimizes package parasitic and simplifies PCB layout.
  •  Input voltage (VIN) range of 4.5V to 21V.
  •  Output current capability of 60A/phase.
  •  Switching frequency up to 1.0MHz.
  •  Ultra-low Rg MOSFET technology minimizes switching losses for optimized high frequency performance.
  •  Synchronous MOSFET with monolithic integrated.

📥 Download Datasheet

Datasheet preview – IRF3575DPbF

Datasheet Details

Part number IRF3575DPbF
Manufacturer International Rectifier
File Size 548.72 KB
Description 60A Exposed Top Integrated Power Block
Datasheet download datasheet IRF3575DPbF Datasheet
Additional preview pages of the IRF3575DPbF datasheet.

📁 Similar Datasheet

  • IRF350 - N-Channel MOSFET (NTE)
  • IRF350 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF350 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF350 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF350 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF351 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF351 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF351 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF352 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF352 - N-Channel Power MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
60A Exposed Top Integrated Power Block IRF3575DPbF FEATURES    Peak efficiency up to 95% at 1.2V  Integrated pair of control and synchronous MOSFETs in a single PQFN package  Proprietary package minimizes package parasitic and simplifies PCB layout  Input voltage (VIN) range of 4.5V to 21V  Output current capability of 60A/phase  Switching frequency up to 1.0MHz  Ultra-low Rg MOSFET technology minimizes switching losses for optimized high frequency performance  Synchronous MOSFET with monolithic integrated Schottky diode reduces dead-time and diode reverse recovery losses  Enhanced top side cooling through exposed pad  Small 6mm x 6mm x 0.
Published: |