IRF3703 Datasheet - International Rectifier

IRF3703 Power MOSFET

PD - 93918 SMPS MOSFET IRF3703 HEXFET® Power MOSFET Applications l Synchronous Rectification l Active ORing Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated VDSS 30V RDS(on) max 2.8mΩ ID 210A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Po.

IRF3703 Features

* J = 25°C, L = 0.6mH RG = 25Ω, I AS = 76A. TJ ≤ 175°C

* ISD ≤ 76A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Data and specifications subject to change without notice. This product has been

IRF3703 Datasheet (95.04 KB)