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IRF5210LPBF Power MOSFET

IRF5210LPBF Description

l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l So.
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

IRF5210LPBF Applications

* PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 60mΩ G S ID = -38A D D S D G D2Pak IRF5210SPbF S D G TO-262 IRF5210LPbF G Gate D Drain S Source Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continu

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Power MOSFET International Rectifier
International Rectifier IRF5210LPBF-like datasheet