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IRF5210SPBF, IRF5210LPBF - Power MOSFET

IRF5210SPBF Description

l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l So.
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

IRF5210SPBF Applications

* PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 60mΩ G S ID = -38A D D S D G D2Pak IRF5210SPbF S D G TO-262 IRF5210LPbF G Gate D Drain S Source Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continu

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This datasheet PDF includes multiple part numbers: IRF5210SPBF, IRF5210LPBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF5210SPBF, IRF5210LPBF
Manufacturer
International Rectifier
File Size
310.58 KB
Datasheet
IRF5210LPBF_InternationalRectifier.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF5210SPBF, IRF5210LPBF.
Please refer to the document for exact specifications by model.

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Power MOSFET International Rectifier
International Rectifier IRF5210SPBF-like datasheet

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