IRF521FI Datasheet, Mosfet, STMicroelectronics

PDF File Details

Part number:

IRF521FI

Manufacturer:

STMicroelectronics ↗

File Size:

233.26kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: IRF521FI 📥 Download PDF (233.26kb)
Page 2 of IRF521FI Page 3 of IRF521FI

IRF521FI Application

  • Applications e UNINTERRUPTIBLE POWER SUPPLIES e MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very

TAGS

IRF521FI
N-Channel
MOSFET
STMicroelectronics

📁 Related Datasheet

IRF521 - N-Channel MOSFET (STMicroelectronics)
IRF 520/FI-521/FI IRF 522/FI-523/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IR.

IRF521 - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FET (Supertex Inc)
.

IRF521 - N-Channel Power MOSFET (Fairchild Semiconductor)
.

IRF5210 - Power MOSFET (International Rectifier)
PD - 91434A IRF5210 HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temp.

IRF5210 - P-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor INCHANGE Semiconductor IRF5210,IIRF5210 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancement mod.

IRF5210L - Power MOSFET (International Rectifier)
PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operat.

IRF5210L - P-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology .

IRF5210LPBF - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l So.

IRF5210S - Power MOSFET (International Rectifier)
PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operat.

IRF5210S - P-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts