IRF520L Datasheet, Mosfet, International Rectifier

IRF520L Features

  • Mosfet .T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRF520NS/L Peak Diode Recovery dv/dt Test Circuit D.U.

PDF File Details

Part number:

IRF520L

Manufacturer:

International Rectifier

File Size:

185.17kb

Download:

📄 Datasheet

Description:

Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p

Datasheet Preview: IRF520L 📥 Download PDF (185.17kb)
Page 2 of IRF520L Page 3 of IRF520L

IRF520L Application

  • Applications The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability an

TAGS

IRF520L
Power
MOSFET
International Rectifier

📁 Related Datasheet

IRF520 - N-Channel Power MOSFET (STMicroelectronics)
IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI s s s s s s s V DSS 100 V 100 V R DS( on) < 0.27 Ω < 0.27 Ω .

IRF520 - N-Channel Power MOSFET (Supertex Inc)
.

IRF520 - N-Channel Power MOSFET (Intersil Corporation)
IRF520 Data Sheet November 1999 File Number 1574.4 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power fi.

IRF520 - N-Channel Power MOSFET (Fairchild Semiconductor)
Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transis.

IRF520 - Power MOSFET (Vishay)
.vishay. IRF520 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .

IRF520 - Power MOSFET (International Rectifier)
.

IRF520 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF520 ·FEATURES ·Typical RDS(on) =0.27Ω ·Avalanche Rugged Technology ·High Current Capabilit.

IRF520A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

IRF520FI - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF520FI ·FEATURES ·Typical RDS(on) =0.23Ω ·Avalanche Rugged Technology ·High Current Capabil.

IRF520FI - N-Channel Power MOSFET (STMicroelectronics)
IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI s s s s s s s V DSS 100 V 100 V R DS( on) < 0.27 Ω < 0.27 Ω .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts