Datasheet Details
- Part number
- IRF5210L
- Manufacturer
- INCHANGE
- File Size
- 223.66 KB
- Datasheet
- IRF5210L-INCHANGE.pdf
- Description
- P-Channel MOSFET
IRF5210L Description
isc P-Channel MOSFET Transistor *.
IRF5210L Features
* Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -24A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IRF5210L Applications
* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
* THERMAL CHARACTERIST
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