IRF5210L Datasheet - INCHANGE

IRF5210L, P-Channel MOSFET

isc P-Channel MOSFET Transistor *

Features

* Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Fast switching application.

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous PD Total Dissipation @TC=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature
* THERMAL CHARACTERIST

IRF5210L-INCHANGE.pdf