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IRF5210L - P-Channel MOSFET

IRF5210L Description

isc P-Channel MOSFET Transistor *.

IRF5210L Features

* Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF5210L Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature
* THERMAL CHARACTERIST

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Datasheet Details

Part number
IRF5210L
Manufacturer
INCHANGE
File Size
223.66 KB
Datasheet
IRF5210L-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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