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IRF6215S - (IRF6215L/S) HEXFET Power MOSFET

This page provides the datasheet information for the IRF6215S, a member of the IRF6215L (IRF6215L/S) HEXFET Power MOSFET family.

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M B A M 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 5.

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Datasheet preview – IRF6215S

Datasheet Details

Part number IRF6215S
Manufacturer International Rectifier
File Size 199.04 KB
Description (IRF6215L/S) HEXFET Power MOSFET
Datasheet download datasheet IRF6215S Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com PD - 91643 IRF6215S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF6215S) l Low-profile through-hole (IRF6215L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -150V RDS(on) = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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