Description
The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- ent (A)
10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0
1msec 10msec
VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60 2.5
Fig11. Maximum Safe Operating Area
50
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
40
ID = 250µA
1.5
30
20
1.0
10
0 25 50 75 100 125 150
0.5 -75 -50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature (°C)
TJ , Temperature ( °C )
Fig 12.
IRF6614TRPBF Datasheet
