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IRF6614TRPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRF6614TRPBF datasheet PDF. This datasheet also includes the IRF6614PBF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRF6614PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

PD -97090 Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 1.4nC IRF6614PbF IRF6614TRPbF RDS(on) Qoss 9.5nC RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l l VDSS Qg tot VGS Qgd 6.0nC 40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V Qrr 5.5nC Vgs(th) 1.8V 19nC Applicable DirectFET Outline and Substrate Outline (see p.

Key Features

  • ent (A) 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) 2.0 40 ID = 250µA 1.5 30 20 1.0 10 0 25 50 75 100 125 150 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature (°C) TJ , Temperature ( °C ) Fig 12.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRF6614 DirectFET Power MOSFET
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IRF6611PbF DirectFET Power MOSFET
IRF6611TRPbF DirectFET Power MOSFET
IRF6612 HEXFET Power MOSFET
IRF6612PbF MOSFET
IRF6612TR1 HEXFET Power MOSFET
IRF6613 HEXFET Power MOSFET