IRF6614TRPBF, IRF6614PBF Power MOSFET

International Rectifier

Description

PD -97090 Typical values (unless otherwise specified) DirectFET Power MOSFET RDS(on) Qgs2 1.4nC IRF6614PbF IRF6614TRPbF RDS(on) Qoss 9.5nC RoHS.
The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

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IRF6614TRPBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF6614TRPBF, IRF6614PBF. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRF6614TRPBF, IRF6614PBF
Manufacturer: International Rectifier
File Size: 292.80 KB
Datasheet: IRF6614PBF-InternationalRectifier.pdf
Description: Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IRF6614TRPBF, IRF6614PBF.
Please refer to the document for exact specifications by model.

Features

* ent (A) 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshold Voltage

Applications

* PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best th

IRF6614TRPBF Distributors

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IRF6614PBF Power MOSFET International Rectifier

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