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IRF6614 Datasheet DirectFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

PD -96907A www.DataSheet4U.com IRF6614 DirectFET™ Power MOSFET ‚ l l l l l l l l l l Application Specific MOSFETs VDSS VGS RDS(on) RDS(on) Lead and Bromide Free  40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V Optimized for High Frequency Switching above 1MHz  Ideal for CPU Core and Telecom Synchronous Rectification in DC-DC Converters Optimized for Control FET socket of Sync.

Buck Converter Low Conduction Losses Compatible with existing Surface Mount Techniques  DirectFET™ ISOMETRIC ST Typical values (unless otherwise specified) Applicable DirectFET Outline and Substrate Outline (see p.

Key Features

  • .00 10.00 100.00 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) 2.0 40 ID = 250µA 1.5 30 20 1.0 10 0 25 50 75 100 125 150 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature (°C) TJ , Temperature ( °C ).

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