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IRF6614TRPBF - Power MOSFET

Download the IRF6614TRPBF datasheet PDF (IRF6614PBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • ent (A) 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) 2.0 40 ID = 250µA 1.5 30 20 1.0 10 0 25 50 75 100 125 150 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature (°C) TJ , Temperature ( °C ) Fig 12.

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Note: The manufacturer provides a single datasheet file (IRF6614PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD -97090 Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 1.4nC IRF6614PbF IRF6614TRPbF RDS(on) Qoss 9.5nC RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l l VDSS Qg tot VGS Qgd 6.0nC 40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V Qrr 5.5nC Vgs(th) 1.8V 19nC Applicable DirectFET Outline and Substrate Outline (see p.
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