IRF6623TRPBF Datasheet (International Rectifier)

IRF6623TRPBF, HEXFET Power MOSFET

The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries u

PD - 97085 IRF6623PbF IRF6623TRPbF RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs www.datasheet4u.com l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l l DirectFET Power MOSFET VDSS 20V RDS(on) max 5.7mΩ@VGS = 10V 9.7mΩ@VGS = 4.5V Qg(typ.) 11nC ST Applicable DirectFET Outline and Substrate Outlin

IRF6623TRPBF Features

* d(off) tf Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms Id Vds Vgs L 0 DUT 1K VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform www.irf.com 5 IRF6623PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=1