IRF7329 Datasheet (International Rectifier)

IRF7329, HEXFET Power MOSFET

S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 www.DataSheet4U.com The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

With these improvements, multiple devices can be used in a

PD- 94095A HEXFET® Power MOSFET l l l l l IRF7329 ID ±9.2A ±7.4A ±4.6A Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel VDSS -12V RDS(on) max (mW) 17@VGS = -4.5V 21@VGS = -2.5V 30@VGS = -1.8V New P-Channel HEXFET Ò power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the ruggedized device design that HEXFET Power MOSF