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IRF7329PBF HEXFET Power MOSFET

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Description

PD - 95042 IRF7329PbF HEXFET® Power MOSFET l l l l l l Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Availabl.
New P-Channel HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si.

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Features

* NE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St. , El Segundo, California 90245, USA Tel: (31

Applications

* S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 www. DataSheet4U. com The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in

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