IRF7380 Datasheet - International Rectifier

IRF7380 Power MOSFET

PD - 94420 IRF7380 HEXFET® Power MOSFET Applications High frequency DC-DC converters VDSS 80V RDS(on) max 73mΩ@VGS = 10V ID 3.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 2.

IRF7380 Features

* d specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visi

IRF7380 Datasheet (241.24 KB)