* of These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provid
IRF7380QPBF Datasheet (223.53 KB)
IRF7380QPBF
International Rectifier
223.53 KB
Power mosfet.
PD - 96132B
IRF7380QPbF
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Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 15.
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