IRF7380PBF
International Rectifier
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Power mosfet.
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IRF7380 - Power MOSFET
(International Rectifier)
PD - 94420
IRF7380
HEXFET® Power MOSFET
Applications High frequency DC-DC converters
VDSS 80V
RDS(on) max 73mΩ@VGS = 10V
ID 3.6A
Benefits Low Gat.
IRF7380QPBF - Power MOSFET
(International Rectifier)
PD - 96132B
IRF7380QPbF
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 15.
IRF7380TRPBF-1 - Power MOSFET
(International Rectifier)
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
80 V 73 mΩ 15 nC 3.6 A
Applications l High frequency DC-DC converters
IRF7380TRPbF-1
HEXF.
IRF7389 - HEXFET Power MOSFET
(International Rectifier)
PD - 91645A
IRF7389
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Ava.
IRF7389PBF - HEXFET Power MOSFET
(International Rectifier)
PD - 95462
IRF7389PbF
HEXFET® Power MOSFET
l l l l l l
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully.
IRF7389PBF-1 - Power MOSFET
(International Rectifier)
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
N-CH 30
0.029
22
7.3
P-CH -30
0.058
23
-5.3
V Ω nC A
IRF7389PbF-1
HEXFET® Power MOSFET
.
IRF730 - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Hig.
IRF730 - N-Channel Power MOSFET
(STMicroelectronics)
IRF730
N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh™II Power MOSFET
General features
Type IRF730
VDSS 400V
RDS(on) <1Ω
ID 5.5A
■ Exceptional d.
IRF730 - N-Channel Power MOSFET
(Intersil Corporation)
IRF730
Data Sheet July 1999 File Number
1580.5
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power.
IRF730 - N-Channel Power MOSFET
(Fairchild Semiconductor)
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