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IRF7403 - Power MOSFET

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • 3X 6.46 ( .255 ) 1.78 (.070) 8X Part Marking Information SO-8 E X A M P LE : TH IS IS A N IR F 7 101 D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X W AFER LO T C O D E (LA S T 4 D IG IT S ) 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O F 7 101 T OP PART NUMBER B O T TO M IRF7403 Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches) 1 .8 5 (. 07 2) 4 .1 0 (. 16 1) 1 .6 5 (. 06 5) 3 .9 0 (. 15 4) 1 .60 (. 06 2) 1 .50 (. 05 9) 0.

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Full PDF Text Transcription

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PD - 9.1245B PRELIMINARY IRF7403 8 7 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S S S G 1 2 A A D D D D VDSS = 30V RDS(on) = 0.022Ω 3 6 4 5 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
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