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IRF7739L1TRPBF Power MOSFET

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Description

IRF7739L1TRPbF Applications l RoHS Compliant, Halogen Free ‚ l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Conver.
The IRF7739L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state.

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Features

* te-to-Source Voltage 300 February 13 ,2013 IRF7739L1TRPbF ID, Drain-to-Source Current (A) 1000 TJ = 175°C 100 10000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec ISD, Reverse Drain Current (A) 10 TJ = 25°C VGS = 0V 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, Source-to-Drain Voltage (V) F

Applications

* l RoHS Compliant, Halogen Free ‚ l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (

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