IRF7737L2TR1PBF Datasheet - International Rectifier

IRF7737L2TR1PBF Power MOSFET

The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with existing layou.

PD - 96414 IRF7737L2TRPbF IRF7737L2TR1PbF Advanced Process Technology Optimized for Industrial Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling Repetitive Avalanche Capability for Robustness and Reliability Lead Free, RoHS Compliant and Halogen Free D DirectFET® Power MOSFET V(BR)DSS 40V RDS(on) typ. 1.

IRF7737L2TR1PBF Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum

IRF7737L2TR1PBF Datasheet (267.53 KB)