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IRF7737L2TR1PBF

Power MOSFET

IRF7737L2TR1PBF Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum

IRF7737L2TR1PBF General Description

The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with existing layou.

IRF7737L2TR1PBF Datasheet (267.53 KB)

Preview of IRF7737L2TR1PBF PDF

Datasheet Details

Part number:

IRF7737L2TR1PBF

Manufacturer:

International Rectifier

File Size:

267.53 KB

Description:

Power mosfet.
PD - 96414 IRF7737L2TRPbF IRF7737L2TR1PbF

* Advanced Process Technology

* Optimized for Industrial Motor Drive, DC-DC and

* <.

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IRF7737L2TR1PBF Power MOSFET International Rectifier

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