IRF7749L1TRPBF

Power MOSFETs

International Rectifier

IRF7749L1TRPBF Features

* e (nC) Fig 9. Typical Total Gate Charge vs Gate-to-Source Voltage February 18, 2013 IRF7749L1TRPbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C TJ = 25°C 10 TJ = -40°C VGS = 0V 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drai

IRF7749L1TRPBF General Description

The IRF7749L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge.

IRF7749L1TRPBF Datasheet (287.14 KB)

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IRF7749L1TRPBF

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International Rectifier

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287.14 KB

Description:

Power mosfets.
IRF7749L1TRPbF Applications l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Conve.

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IRF7749L1TRPBF Power MOSFETs International Rectifier

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IRF7749L1TRPBF Features

IRF7749L1TRPBF General Description

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